Journal of Semiconductor Devices and Circuits Original Research

Progress and Prospects of Chromium-Based p-Type TCOs: Next-Generation Transparent Electronics

  1. Sandeep Department of Mechanical Engineering, School of Engineering & Technology, Krishna Reddy Mangalam University, Gurugram
  2. Kaushal Kumar Department of Mechanical Engineering, School of Engineering & Technology, Krishna Reddy Mangalam University, Gurugram
  3. Jarnail Singh Department of Mechanical Engineering, School of Engineering & Technology, Krishna Reddy Mangalam University, Gurugram

Abstract

The field of active devices has recently shown a great interest in p-type transparent conducting oxides (TCOs). In the realm of optoelectronics, a new generation known as "Invisible Electronics" began with the introduction of transparent junctional devices. In recent years, many different p-type transparent conducting oxide materials with enhanced optical and electrical properties have been produced. These p-TCOs are not stoichiometric and are doped with suitable counter-cations/anions. For p-TCOs, chromium (Cr)-based materials stand out as the best option among all previously employed p-type materials. Despite their electrical properties lie on the insulator side, appropriate doping has been shown to greatly increase their electrical conductivity. In this review, an up-to-date and detailed explanation of TCO materials based on chromium (Cr) is provided. The development of highly efficient p-TCO films could lead in an innovative era in the form of “Transparent Electronics”, as it could pave the way for the fabrication of transparent active devices.

Keywords

References (19)

  1. Banerjee AN, Chattopadhyay KK. Recent developments in the emerging field of crystalline p-type transparent conducting oxide thin films. Prog Cryst Growth Charact Mater. 2005; 50(1–3): 52–105.
  2. Zhang KHL, Xi K, Blamire MG, Egdell RG. P-type transparent conducting oxides. J Phys Condens Matter. 2016; 28: 383002.
  3. Uysal F. Dust detection on solar photovoltaic panels used in optoelectronics with convolutional neural network-based deep learning model. Int J Comput Exp Sci Eng. 2025; 11(1): 873–8.
  4. Salah I, Çorlu T, Kaleli M. Effect of annealing in nitrogen atmosphere on the topographic and structural properties of SnO2 thin films produced by airbrush. Int J Comput Exp Sci Eng. 2024; 10(1): 21–6.
  5. Singh J, Bhardwaj P, Kumar R, Verma V. Progress in developing highly efficient p-type TCOs for transparent electronics: a comprehensive review. J Electron Mater. 2024; 53(12): 7179–210.
  6. Singh J, Kumar R, Verma V, Kumar R. Structural and optoelectronic properties of epitaxial Ni- substituted Cr2O3 thin films for p-type TCO applications. Mater Sci Semicond Process. 2021; 123: 105483.
  7. Brunin G, Ricci F, Ha VA, Rignanese GM, Hautier G. Transparent conducting materials discovery using high-throughput computing. NPJ Comput Mater. 2019; 5(1): 1–13.
  8. Kawazoe H, Yasukawa M, Hyodo H, Kurita M. P-type electrical conduction in transparent thin films of CuAlO2. Nature. 1997; 389(6654): 939–42.
  9. Dahl JP, Switendick AC. Energy bands in cuprous oxide. J Phys Chem Solids. 1966; 27(6–7): 931–42.
  10. Nagarajan R, Draeseke AD, Sleight AW, Tate J. p-type conductivity in CuCr1-xMgxO2 films and powders. J Appl Phys. 2001; 89(12): 8022–5.
  11. Farrell L, Norton E, Smith CM, Caffrey D, Shvets IV, Fleischer K. Synthesis of nanocrystalline Cu-deficient CuCrO2 – a high figure of merit p-type transparent semiconductor. J Mater Chem C. 2016; 4(1): 126–34.
  12. Ahmadi M, Asemi M, Ghanaatshoar M. Mg and N co-doped CuCrO2: A record breaking p-type TCO. Appl Phys Lett. 2018; 113(24): 242101.
  13. Singh J, Verma V, Kumar R, Kumar R. Comparative studies on optoelectronic properties of epitaxial MgxCr2-xO3 and AlxCr2-xO3 (x=0, 0.1, 0.2 and 0.3) thin films deposited on sapphire substrates. J Alloys Compd. 2020; 847: 156371.
  14. Arca E, Fleischer K, Shvets IV. Magnesium, nitrogen codoped Cr2O3: A p-type transparent conducting oxide. Appl Phys Lett. 2011; 99(11): 111910.
  15. Farrell L, Fleischer K, Caffrey D, Mullarkey D, Norton E, Shvets IV. Conducting mechanism in the epitaxial p-type transparent conducting oxide Cr2O3:Mg. Phys Rev B. 2015; 91(12): 125202.
  16. Arca E, Kehoe AB, Veal TD, Shmeliov A, Scanlon DO, Downing C, et al. Valence band modification of Cr2O3 by Ni-doping: Creating a high figure of merit p-type TCO. J Mater Chem C. 2017; 5: 12610–8.
  17. Zhang KHL, Du Y, Papadogianni A, Bierwagen O, Sallis S, Piper LFJ, et al. Perovskite Sr-doped LaCrO3 as a new p-type transparent conducting oxide. Adv Mater. 2015; 27(35): 5191–5.
  18. Dabaghmanesh S, Sarmadian N, Neyts EC, Partoens B. A first principles study of p-type defects in LaCrO3. Phys Chem Chem Phys. 2017; 19(34): 22870–6.
  19. Jiang SP, Liu L, Ong KP, Wu P, Li J, Pu J. Electrical conductivity and performance of doped LaCrO3 perovskite oxides for solid oxide fuel cells. J Power Sources. 2008; 176(1): 82–9.
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