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Journal of Semiconductor Devices and Circuits

MOS Capacitor: A Processing Tool

  1. Mukesh Maurya
  2. Priya Singh

Abstract

In this modern world of technology, life without electronics is unimaginable. We are now living in the age of electronics. It is hard to find an electrical item in your home that does not have electronics part in it. The electronic devices give better efficiency and reliability in terms of power loss, speed and cost; the fundamental component of each Integrated Circuit (IC) chip, namely the MOSFET (metal oxide semiconductor field effect transistor) needs to be scaled down in size. Device scaling has resulted in unacceptable leakage current in the MOS device because of direct tunnelling of electrons through the gate dielectric. The battery of any electronic device can be discharged rapidly and will produce excessive heat due to the leakage current. Excessive heat produced by all the MOSFET reduces the efficiency. In order to overcome this problem, the oxide of high-k material like hafnium and zirconium are being used to replace the previously used SiO2. As the size of MOS transistor continues to scale-down, the use of SiO2 as a gate dielectric material is approaching the electrical and structural limitation of the material. Regulation of the electrical properties of the MOS system has been one of the crucial aspects that have led to stable and high-performance Si integrated circuit. In this paper, we will study operation of MOS system, how the electrical properties of MOS system are measured, and the result of measurement, how these electrical properties are controlled and how to monitor the electrical property of MOS system during IC fabrication. The MOS capacitor is used in both studying the electrical property of MOS system and monitoring IC fabrication.

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