STM Journals Peer-reviewed research from Consortium e-Learning Network

Journal of Polymer & Composites Original Research Open Access

Experimental Analysis of Nano-carbon Doped Alumina for Industrial Applications

  1. Alok Singh Department of Physics, Harcourt Butler Technical University,Kanpur
  2. Savita Singh Department of Physics, Harcourt Butler Technical University,Kanpur
  3. Sudhir K Sharma Department of Physics, Harcourt Butler Technical University, Kanpur

Abstract

The use of nano-carbon metal matrix composites can provide a solution to the enduring issue of optimal material selection and optimization for getting metal-insulator transition (MIT) behavior at a particular frequency at ambient temperature. Other substances, like two-dimensional (2D) transition metal dichalcogenides (TMD), vanadium oxide (VO2), and germanium telluride (Ge-Te), have difficult challenges in achieving effectively the MIT property at a given frequency and temperature. It is also difficult to accurately explain the mechanism by which these materials acquire the MIT characteristic. In this demonstrated research work, nano-carbon doped aluminium oxide has been synthesized by chemical vapor deposition (CVD) methodology. The electrical properties of developed samples were measured by auto-lab PGSTAT with a frequency range of 10 μHz–32 MHz with a resolution of 0.003% whereas fractographical analysis of the samples was performed by scanning electron microscopy from Zeiss Evo 18. The experimental frequency response plots illustrated that nanocarbon doped alumina may be utilized as a low-pass filter for top frequency discontinuation at 9000 Hz in electronic industrial applications. The energy dispersive X-ray chemical analysis (EDS or EDX) of nano-carbon doped alumina showed a MIT development happens at 30% (by mass) nano-carbon doping in aluminium. The fractographical analysis of nano-carbon doped alumina revealed the minimum voids, defects, and porosity that cause marginal deviation in electrical properties at a higher temperature. As a result, this nano-carbon doped aluminium oxide material can be the future alternative to engineering materials for electronic industries such as high-frequency switches. Future research might examine the possibilities of various metal oxides doped with nano-carbon for higher cut-off frequency switches.

Keywords

References (16)

  1. Wang M, Lin F, Rais-Zadeh M. Need a Change? Try GeTe: A Reconfigurable Filter Using Germanium Telluride Phase Change RF Switches. IEEE Microwave Magazine. 2016;17(12):70-79. doi:10.1109/mmm.2016.2608699
  2. Rais-Zadeh M, Wang M. Advanced reconfigurable RF/microwave electronics. 2017 IEEE Radio and Wireless Symposium (RWS). 2017:13-15. doi:10.1109/rws.2017.7885931
  3. Ha SD, Zhou Y, Duwel AE, White DW, Ramanathan S. Quick Switch: Strongly Correlated Electronic Phase Transition Systems for Cutting-Edge Microwave Devices. IEEE Microwave Magazine. 2014;15(6):32-44. doi:10.1109/mmm.2014.2332422
  4. Wang M, Rais-Zadeh M. Development and evaluation of germanium telluride phase change material based ohmic switches for RF applications. Journal of Micromechanics and Microengineering. 2016;27(1):013001. doi:10.1088/0960-1317/27/1/013001
  5. Borodulin P, El-Hinnawy N, Padilla CR, et al. Recent advances in fabrication and characterization of GeTe-based phase-change RF switches and MMICs. 2017 IEEE MTT-S international microwave symposium (IMS); 2017 Jun-Oct. p. 285–8.
  6. Morin FJ. Oxides Which Show a Metal-to-Insulator Transition at the Neel Temperature. Physical Review Letters. 1959;3(1):34-36. doi:10.1103/physrevlett.3.34
  7. Goodenough JB. Anomalous Properties of the Vanadium Oxides. Annual Review of Materials Science. 1971;1(1):101-138. doi:10.1146/annurev.ms.01.080171.000533
  8. Ahn CH, Triscone JM, Mannhart J. Electric field effect in correlated oxide systems. Nature. 2003;424(6952):1015-1018. doi:10.1038/nature01878
  9. Martens K, Radu IP, Mertens S, Shi X, Nyns L, Cosemans S, et al. The VO2 interface, the metal-insulator transition tunnel junction, and the metal-insulator transition switch On-Off resistance. Journal of Applied Physics. 2012;112(12). doi:10.1063/1.4767473
  10. Rampelberg G, Schaekers M, Martens K, Xie Q, Deduytsche D, De Schutter B, et al. Semiconductor-Metal Transition in thin VO2 films deposited by ozone based Atomic Layer Deposition. Materials for Advanced Metallization (MAM 2012), Grenoble, France, 2012.
  11. Babula P, Adam V, Opatrilova R, Zehnalek J, Havel L, Kizek R. Uncommon Heavy Metals, Metalloids and Their Plant Toxicity: A Review. Sustainable Agriculture Reviews. 2009:275-317. doi:10.1007/978-1-4020-9654-9_14
  12. Singh S, Singh A, Sharma SK. Analytical Modeling for Mechanical Strength Prediction with Raman Spectroscopy and Fractured Surface Morphology of Novel Coconut Shell Powder Reinforced: Epoxy Composites. Journal of The Institution of Engineers (India): Series C. 2016;98(3):235-240. doi:10.1007/s40032-016-0254-9
  13. Singh S, Singh A, Sharma SK. Analytical Prediction Models for Density, Thermal Conductivity and Mechanical Strength of Micro-scaled Areca Nut Powder-Reinforced Epoxy Composites. Journal of The Institution of Engineers (India): Series C. 2019;101(1):43-51. doi:10.1007/s40032-019-00535-9
  14. Lu J, Liu H, Tok ES, Sow CH. Interactions between lasers and two-dimensional transition metal dichalcogenides. Chemical Society Reviews. 2016;45(9):2494-2515. doi:10.1039/c5cs00553a
  15. Dagdeviren OE, Acikgoz O, Grütter P, Baykara MZ. Direct imaging, three-dimensional interaction spectroscopy, and friction anisotropy of atomic-scale ripples on MoS2. npj 2D Materials and Applications. 2020;4(1). doi:10.1038/s41699-020-00164-2
  16. Park JH, Coy JM, Kasirga TS, Huang C, Fei Z, Hunter S, et al. Measurement of a solid-state triple point at the metal–insulator transition in VO2. Nature. 2013;500(7463):431-434. doi:10.1038/nature12425
Support