Bandgap Analysis of Quasi Bandgap Semiconductor Using FDTD Technique

G. Palai; C. S. Mishra; K. K. Sethi

doi:10.37591/jomsd.v2i2.5218

Abstract

In this work photonic bandgap analysis of boron nitride (BN) quasi bandgap semiconductor is investigated using finite difference time domain (FDTD) method. Here boron nitride semiconductor is cogitated as a-BN, h-BN, c-BN and w-BN semiconductor, where boron nitride is realized by the combination of two BN semiconductor layers separated by air. Simulation for photonic bandgap of the aforementioned semiconductor structure is carried out with respect to thickness of odd and even layers where photonic bandgap is computed using dispersion diagram, whereas dispersion relation is computed for thickness of (100 nm, 900 nm) , (300 nm, 700 nm), (600 nm, 400 nm) and (900 nm, 100 nm) of odd and even layer respectively. Simulation results showed that photonic band gap (PBG) is differed for different thickness of odd and even layers of a-BN, h-BN, c-BN and w-BN semiconductor. Finally it is inferred that PBG of all BN semiconductor varies randomly with respect to thickness of the above layers.