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• Published Subscription 1 Feb 2021

  Bandgap Analysis of Quasi Bandgap Semiconductor Using FDTD Technique

  By G. Palai, C. S. Mishra, K. K. Sethi

  Abstract: In this work photonic bandgap analysis of boron nitride (BN) quasi bandgap semiconductor is investigated using finite difference time domain (FDTD) method. Here boron nitride semiconductor is cogitated as a-BN, h-BN, c-BN and w-BN semiconductor, where boron nitride is realized by the combination of two BN semiconductor layers separated by air. Simulation for photonic bandgap of the aforementioned semiconductor structure is carried out with respect to thickness of odd and …

  Published in Journal of Microelectronics and Solid State Devices · Vol. 2, Issue 2, 2015 · pp. 1–4 Read article →