Numerical Simulation-based Comparative Study of P3HT-based Top Contact and Bottom Contact OTFTs

Arun Dev Dhar Dwivedi; S.K. Jain; Shubham Dadhich

doi:10.37591/joedt.v10i3.3390

Abstract

AbstractIn this paper presents numerical simulation-based comparative study of bottom and top contact configurations of P3HT based organic thin-film transistor (OTFT). I-V characteristics has been evaluated using the TCAD simulator and comparison of the performance parameters of these devices has been presented. The dimensions of the transistors for all the proposed structures are kept the same for a valid comparison between them. The observed results were explained based on the significantly reduced area of the injection and carrier extraction regions in the source/channel and channel/drain interfaces in the lower contact transistor, with consequent performance degradation compared to the top contact transistor.Keywords: Poly (3-hexylthiophene) P3HT, organic thin-film transistors (OTFTs), numerical simulation, bottom gate top contact (BGTC), bottom gate bottom contact (BGBC), top gate top contact (TGTC)Cite this ArticleS.K. Jain, Shubham Dadhich, A.D.D. Dwivedi. Numerical Simulation based Comparative Study of P3HT based Top Contact and Bottom Contact OTFTs. Journal of Electronic Design Technology. 2019; 10(3): 27–32p.