Semiconducting
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Ab Initio Investigation on Half-Heusler Compounds CoVZ (Z = P, Bi, Sb, As): Understanding Structural, Electronic, Magnetic, and Elastic Behavior
Abstract: The structural, electrical, mechanical, and magnetic properties of Half-Heusler CoVZ (Z= P, Bi, Sb, and As) compounds have been studied using the ab initio method. Here, we use the full potential linearized augmented plane wave (FP-LAPW) method, which is implemented by WIEN2k. The compounds CoVZ (Z= P, Bi, Sb, and As) are near to the Fermi level as implemented in the WIEN2k algorithm, exhibiting 100% spin polarization with finite band …
Published in Journal of Microelectronics and Solid State Devices · Vol. 10, Issue 3, 2023 Read article