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Enhancing the Efficiency of Subthreshold Nanoscale MOSFETs for IoT Applications.
Abstract: In the contemporary landscape of the Internet of Things (IoT), this study focuses on the design and optimization of underlap Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors (SOI MOSFETs) tailored for real-time IoT applications. Employing an optimal spacer size (approximately 0.8 times the gate length, or LG), the device exhibits, at an operational frequency of20 GHz, an intrinsic gain of about 25 dB in the low to moderate inversion region (VOD=VGS– VTH≤90 mV, …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 13, Issue 3, 2023 · pp. 1–7 Read article