HEMT
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Drain Characteristics of GaN based Single-Heterojunction HEMTs with Variations in Gate Length and in Thickness of AlGaN Nano-Layer
Abstract: We have studied the drain characteristics in single-heterojunction AlGaN/GaN high electron mobility transistors (HEMTs) using the SILVACO-ATLAS software tool. The drain characteristics are studied with respect to five types of simulated structures. In each type of structures, the gate length and thickness of AlGaN nano-layer are different with respect to other types. Effects of drain voltage and gate voltage on drain current are studied by the simulated structures. Also, the …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 10, Issue 1, 2020 · pp. 1–10 Read article