cross bar memory array.
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Optimization and Analysis of InGaAs Vertical Nanowire Transistor for Memory Array Applications
Abstract: In this paper, we present a cylindrical gate all around In 0.53 Ga 0.47 As Vertical Nanowire Transistor (VNWT) on silicon at ultra-shortchannel gate length 14nm by numerical simulation approach. The In 0.53 Ga 0.47 As VNWT device dimensions like diameter, source and drainextension length and channel doping are taken as critical process parameters and optimized for better performance. The proposed device isscalable up-to 10nm with a maximum On-current of …
Published in Journal of VLSI Design Tools and Technology · Vol. 13, Issue 2, 2023 · pp. 32–44 Read article