AlGaN/GaN High-Electron-Mobility-Transistor (HEMTs) devices

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• Published Subscription 23 Sep 2019

  Electro Thermal Simulation of AlGaN/GaN HEMT

  By Arun Dev Dhar Dwivedi, Suchitra .

  Abstract: This paper presents electro thermal simulation of AlGaN/GaN High Electron Mobility Transistor (HEMT) without AlN layer nucleation layer and AlGaN/GaN HEMT by introducing AlN nucleation layer. With the help of Silvaco ATLAS lattice temperature of the devices figured out. It is observed that self heating in AlGaN/GaN HEMT without AlN nucleation layer is higher than the self heating in AlGaN/GaN HEMT with AlN nucleation layer. Simulation of lattice temperature inside …

  Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 2, 2019 · pp. 18–27 Read article →