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1 article for “write delay leakage current”
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Delay Analysis of HS-14T 45nm CMOS SRAM with Different SRAM Techniques for Improvement in Speed
Abstract: This paper presents a novel HS-14T design aimed at significantly improving read and write delays compared to conventional 6T and other memory cells RHRD-12T, SEUH-12T, and NHRC-14T. As technology scales, the demand for faster and more stable memory cells becomes increasingly critical. Our proposed HS-14T incorporates additional transistors to enhance stability and reduce access times, resulting in notable performance gains. Comprehensive simulations reveal that the HS-14T SRAM cell substantially reduces …
Published in Journal of VLSI Design Tools and Technology · Vol. 14, Issue 2, 2024 · pp. 1–13 Read article