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2 articles for “Spintronic Memory”
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Photonic-Assisted Spintronic Solid-State Switching Model for High-Speed Memory Devices
Abstract: The rapid advancement of high-speed computing and data-centric applications has intensified the demand for energy-efficient and ultra-fast memory technologies. This paper proposes a Photonic-Assisted Spintronic Solid-State Switching Model for next-generation high-speed memory devices. The proposed framework integrates photonic excitation mechanisms with spintronic switching dynamics to enhance data transfer speed, minimize switching delay, and reduce power dissipation in solid-state memory architectures. By combining optical pulse-assisted spin polarization with magnetic tunnel junction-based …
Published in International Journal of Solid State Innovations & Research · Vol. 4, Issue 1, 2026 Read article
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Spintronic Logic Circuits for Ultrafast Processing
Abstract: Spintronic logic has emerged as one of the most promising post-CMOS paradigms capable of addressing the speed, density, and energy challenges of deeply scaled silicon technologies. By relying on the intrinsic properties of electron spin and magnetization dynamics, spintronic devices—particularly Magnetic Tunnel Junctions (MTJs), Spin-Transfer Torque (STT), and Spin–Orbit Torque (SOT) structures—enable ultrafast, non-volatile data processing with significantly reduced energy consumption. Despite remarkable device-level advancements, circuit- level realization of high-speed, …
Published in International Journal of VLSI Circuit Design & Technology · Vol. 3, Issue 2, 2025 · pp. 35–43 Read article