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3 articles for “Side Flushing”
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Parametric Optimization of Tool Wear Rate in Side Flushing form of Die Sink EDM of EN-31 Die Steel
Abstract: Electrical discharge machining (EDM) is one of the most extensively used non-conventional material removal processes for manufacturing geometrically complex or hard material parts that are extremely difficult to machine by conventional machining process. EDM researchers have concentrated on achieving faster and more efficient metal removal rate coupled with a reduction in tool wear and improved surface characteristics. In this paper, the operating performance measures of side flushing type of electrical …
Published in Journal of Materials & Metallurgical Engineering · Vol. 1, Issue 1-3, 2011 · pp. 72–80 Read article
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A Review of Blocking Side-Channel Threats in Parallel Cloud Systems
Abstract: Side-channel attacks (SCAs) pose a critical security threat to parallel computing systems, particularly in shared cloud environments where multi-tenancy and resource contention create exploitable vulnerabilities. This study presents a comprehensive review of SCAs in parallel architectures, analyzing attack vectors such as cache-based exploits (e.g., Prime + Probe, Flush + Reload), timing attacks, power analysis, and network-based covert channels. We examine real-world cases including Spectre and Meltdown vulnerabilities that exposed fundamental …
Published in Recent Trends in Parallel Computing · Vol. 12, Issue 2, 2025 · pp. 15–25 Read article
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Pharmacokinetics and Stability of Polymer-Encapsulated Drugs
Abstract: Making drugs that are covered by plastics is a fresh and useful way to make medicines work better, last longer, and treat diseases better. Putting drugs inside polymer materials helps them breakdown better, stays in the body longer, and lowers the number of side effects they cause. This is necessary to slowly release the drug and help people stick to their treatment plan. Polymers are used to wrap drugs. This …
Published in Journal of Polymer & Composites · Vol. 13, Issue 4, 2025 · pp. 349–361 Read article