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2 articles for “Shockley-Read-Hall (SRH)”
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Performance Analysis of Junctionless SONOS Memory
Abstract: AbstractThis paper presents the performance analysis of the JL SONOS device electrical characteristics of the two different types of device i.e., one built on BULK substrate and other over the SOI substrate. The difference in the properties and its related impact on the device performance will be discussed through physical interpretations and mathematical equations. Simulation of both devices is done by taking same device dimension and parameter to check the …
Published in Journal of Operating Systems Development & Trends · Vol. 7, Issue 3, 2020 · pp. 25–31 Read article
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Design and Performance of Semiconductor-Biosensor
Abstract: In this work, a high electron mobility transistor (HEMT) based biosensor is designed to detect the virus-protein. In this work, all the simulation-studies are carried out in the SILVACO-ATLAS physical simulator using the following models: Shockley Read Hall (SRH), band gap narrowing, Auger recombination, and Fermi Dirac statistics. Newton trap numerical solver is used in the device simulation. Conduction band engineering of the biosensor is studied. DC and RF properties …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 2, 2021 · pp. 1–13 Read article