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2 articles for “MOSFET optimization”
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Machine Learning Assisted Optimization of Nanoscale MOSFET Parameters Using TCAD Simulation
Abstract: This paper presents a machine learning (ML) assisted framework for the multi-objective optimization of nanoscale bulk n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with a 10 nm physical gate length, high-k HfO₂ gate dielectric, and TiN metal gate. Technology computer-aided design (TCAD) simulations employing drift-diffusion transport, Shockley-Read-Hall recombination, Lombardi mobility degradation, and density- gradient quantum correction models are used to generate a parametric dataset of 2,400 device configurations spanning gate length (L), …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 10–19 Read article
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A Review on Solar Multilevel Inverter for the Production of Free Energy Due to the Structure with Long-life Feature
Abstract: Multilevel inverters play a major role in medium voltage, high power and renewable applications. It is also used in certain applications where high switching frequency, and high output voltage gain are required. The switching transient period of a MOSFET should be minimal because a high dv/dt rate could result in permanent damage to the MOSFET. The harmonics present could cause many problems and so it has to be minimized. The …
Published in Journal of Nuclear Engineering & Technology · Vol. 14, Issue 1, 2024 · pp. 13–18 Read article