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2 articles for “HSNM”
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Characterization of a Single-Ended Schmitt-Trigger based 9T SRAM Cell
Abstract: Data stability is a prime concern in submicron regime. This work presents a single-ended Schmitt- trigger (ST) based 9T static random-access memory (SRAM) cell. Proposed design provides enhanced read stability as it uses ST based inverters. Low power dissipation is achieved by employing just a single bit line. Simulation is carried out on gpdk 180nm CMOS technology on Cadence. Proposed design offers 1.36x improvement in read static noise margin (RSNM) …
Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 2, 2019 · pp. 26–31 Read article
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Schmitt-Trigger Based 12T SRAM Cell with Enhanced Stability
Abstract: In this work, we present a single-ended Schmitt-trigger (ST) based 12T static random access memory (SRAM) cell. The proposed cell employs cross-point data aware write structure, and thus supports bit interleaving architecture to mitigate soft errors. The proposed cell does not suffer from read disturbance as bit line is completely isolated from bit storage node. Simulation is done on 180 nm CMOS technology on Cadence. Read static noise margin (RSNM) …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 5–10 Read article