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143 articles for “electrodes”
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Review and analysis of the Programmable Tungsten Inert Gas Welding Machine
Abstract: The purpose of this study is to examine metal inert gas (MIG) and tungsten inert gas (TIG) welding processes. This study focuses on welding defects with various kinds of AISI- 1020 mild steel welding joints when using metal inert gas (MIG) and tungsten inert gas (TIG). The impact of different process variables on mild steel welding was looked into. In this study, the main process parameters were changed, and destructive …
Published in International Journal of Manufacturing and Production Engineering · Vol. 4, Issue 2, 2026 Read article
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Experimental Study on Microstructural Evolution and Tensile Properties of Robotic Pulse MIG Welded Steel
Abstract: Robotic pulse Metal Inert Gas (MIG) welding has emerged as an advanced joining technique capable of producing superior weld quality through precise control of welding parameters. The present study evaluates the influence of welding parameters on the microstructural evolution and tensile properties of steel weldments fabricated using robotic pulse MIG welding and compares the results with conventional pulse MIG welding. Microstructural characterization was carried out using Scanning Electron Microscopy (SEM) …
Published in Journal of Experimental & Applied Mechanics · Vol. 17, Issue 2, 2026 · pp. 40–52 Read article
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Study the Effect of Applied Gate Voltage on Threshold Potential and Carrier Transport Behavior of Three-Terminal Novel Prototype Device having Configuration P-type Si/SiO2/CuFeS2/Al
Abstract: This study presents a trial approach for the fabrication and characterization of a novel p-Si/SiO₂/CuFeS₂/Al field-dependent three-terminal electronic device designed to investigate charge transport behavior across multiple semiconductor junctions under externally applied bias voltages. The proposed prototype incorporates CuFeS₂ (chalcopyrite) as the active semiconductor layer, marking its first reported application in a field-induced electronic device architecture. The device was fabricated using a layered heterostructure consisting of p-type silicon, a silicon …
Published in International Journal of Crystalline Materials · Vol. 3, Issue 2, 2026 · pp. 1–7 Read article