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283 articles for “Semiconducting”
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Case Study of Multipulse Converter System for IGBT Based Inverter in Induction Melting Furnace
Abstract: AbstractHarmonic mitigation is an important aspect for the smooth operation of modern power electronics converters, medical equipment, and home appliances which are generally fed by a common grid supply. In large power equipment such as induction furnaces, it becomes necessary to reduce or eliminate harmonics from the supply. In order to cater dynamic load cycle during complete melting cycles in induction furnaces, power needs to vary. This can be achieved …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 1, 2017 · pp. 17–23 Read article
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A Double-Ended Read-Decoupled 8T SRAM Cell with Improved Read Stability and Access Time at 45 nm Technology
Abstract: AbstractDue to rampant leveling of instrument measurements, the stability of an SRAM cell is the biggest anxiety for upcoming technology. In this paper, it is introduced by an 8T (8-transistor) SRAM cell. The enlarged data stability is offered by proposed cell until read operation. The voltage scale of the node keeping ‘0’ is enlarged by introduced cell and thus it achieves a near butterfly curve that is vital to creation …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 2, 2017 · pp. 29–33 Read article
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Simulation of Threshold Voltage Variation of Enhancement Mode n-channel MOSFET
Abstract: AbstractThe paper focuses on simulation of variation of threshold voltage as a function of effective channel length of the short-channel MOSFETs with a Gaussian-like doping profile. An investigation of short channel effect (SCE) in deep submicron region has been carried out. The validity of the proposed simulation is shown by comparing the results with the numerical calculation and simulation of data obtained by using the commercially available simulation software. Finally, …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 2, 2017 · pp. 34–40 Read article
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Dynamic Analysis of the Proposed Bi-directional Converter for Charging and Discharging Operation
Abstract: AbstractThis paper proposes a fifth order bi-directional converter configuration with low current ripple on either side as well as good voltage conversion range having only three switches. This converter is implemented for load power levelling between a DC grid and secondary batteries. A comparative study of proposed topology with widely used bi-directional converter configurations is made and relative merits and demerits are pointed out. With state-space and discrete-time modelling techniques, …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 2, 2017 · pp. 41–51 Read article
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A Survey on Different Speech Enhancement Algorithms used in Hearing Aid Application
Abstract: AbstractThe requirement for efficient speech enhancement techniques in hearing prosthetics is encountered for many practical applications. Existing speech enhancement algorithms can improve speech quality but not speech intelligibility and reasons for that are unresolved. In the development process of noise reduction algorithms, an objective with speech intelligibility is of great interest. In this review paper, different algorithms for hearing prosthetics are studied. After reviewing standard methods used for speech intelligibility …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 1, 2016 · pp. 1–5 Read article
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Arduino Based Motor Control Using LabVIEW
Abstract: AbstractSpeed of a DC motor varies proportional to the input voltage. With a fixed supply voltage, the speed of the motor can be changed by switching the supply on and off so frequently that the motor notices only the average voltage effect and not the switching operation. This project focuses on controlling the speed of a DC motor using PWM technique. The project basically consists of Arduino and motor driver, …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 1, 2016 · pp. 6–12 Read article
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Design of a Multipurpose Ternary Arithmetic Circuit Using CNTFET
Abstract: AbstractIn this paper, a multipurpose ternary arithmetic circuit is presented for ternary processors based on carbon nanotube field effect transistors (CNTFETs). Both addition and subtraction can be performed using same circuit’s configuration, which is the special feature of the proposed circuit. The combination of pseudo and complimentary logic structure are employed to blend the binary and ternary logic techniques. The propagation delay and power delay product are 139.5 pico second …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 1, 2016 · pp. 13–24 Read article
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SPICE Modeling of LDMOSFET Transistor
Abstract: AbstractHigh voltage integrated circuits, these days are the most viable alternatives to discrete circuits for various applications. The popular amongst them is the lateral double diffused MOS transistor (LDMOS). It is based on the lightly doped drain (LDD) concept. The constraint that occurred in modeling LDMOS is to minimize the on-resistance along with maintaining a high breakdown voltage. To achieve the objective, the help of RESURF (Reduced Surface Field) concept …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 1, 2016 · pp. 42–57 Read article
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Digital Front-End Architecture of ECG Acquisition System with 0.5V Supply
Abstract: AbstractDue to the popularity of portable electronic products, low power systems have attracted more attention in recent years. Dynamic power consumption remains to be the biggest contributor to the total power consumption of a hardware design. A new power efficient electrocardiogram acquisition system that uses a fully digital architecture to reduce the power consumption and chip area has been proposed in this paper. The design of analog-to-digital converters (ADCs) is …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 11–20 Read article
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Modeling of In0.53Ga0.47As Quantum Dot Solar Cell
Abstract: AbstractQuantum dot solar cells have received tremendous attention for the next generation solar cell technology in the last decade. This paper exhibits the influence of In0.53Ga0.47As/GaAs quantum dots in a conventional p-i-n GaAs solar cell. The study reveals that insertion of In0.53 Ga0.47As/GaAs quantum dots in the p-i-n solar cell increases the short circuit current density as well as the overall conversion efficiency. When comparing a p-i-n cell with a …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 27–31 Read article
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Simulation Studies on the Electrical Characteristics of High Electron Mobility Transistors
Abstract: AbstractSimulation studies have been performed on the AlGaN/GaN high electron mobility transistor (HEMT) with AlN spacer layer. The current-voltage characteristics have been studied with respect to different gate voltages and different doping concentrations. Studies have been performed on the quantum well depth variation corresponding to the designed HEMTs.Keywords: Doping, drain current, drain voltage, quantum wellCite this ArticleSanjib Kalita, Ashish Prajapati, Susanta Sinha Roy, Jyoti Prasad Banerjee, James Andrew McLaughlin, Subhadeep …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 32–36 Read article
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InGaN Based p-i-n Solar Cell
Abstract: AbstractA major hurdle in achieving ultrahigh efficiency solar cells is the availability of materials and corresponding device structures. The ternary alloy InGaN has the potential to achieve high efficiency due to its several advantages. However, the efficiency of a p-n InGaN solar cell is still quite low compared to other III–V technologies. In this work, with a view to attain better efficiency, inclusion of an intrinsic layer (i-layer) in the …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 3, 2016 · pp. 1–5 Read article
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Simulation Studies on the Electrical Characteristics of Novel Nanoelectronic AlGaN/GaN/AlGaN Double-Heterojunction HEMTs for Industrial Applications
Abstract: AbstractWe report the drain characteristics of AlGaN/GaN/AlGaN double heterojunction (DH) high electron mobility transistors (HEMTs) with the associated quantum well depths. The drain current is higher corresponding to the larger doping concentration of AlGaN nano-layer. The drain current is higher with the larger gate voltage at any particular drain voltage. The quantum well depth is significantly higher with the increasing doping concentration of AlGaN nano-layer. About the novelty of this …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 3, 2016 · pp. 6–18 Read article
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Variations of Source Current in the Double-Heterojunction HEMTs
Abstract: AbstractIn this report, we have studied the variations in source current with respect to drain voltage corresponding to the double heterojunction (DH) high electron mobility transistors (HEMTs). Also, the effects of gate voltage and aluminium mole fractions on source current are studied. In this work, the highest source current achieved is 3.3 mA. This work may be useful to design many nanoelectronic HEMTs.Keywords: Source current, drain voltage, gate voltage, mole …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 3, 2016 · pp. 19–24 Read article
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Solving Economic Load Dispatch Problems through Moth Flame Optimization Algorithm
Abstract: AbstractThis paper proposes the nature-inspired moth flame optimization (MFO) algorithm to solve the economic load dispatch (ELD) problem of power system. The ELD is a concept where the committed generating units are scheduled to meet the total power demanded by the residential area. The ELD problems are solved by the optimization process of the objective function, hence optimization is done by minimizing the total fuel cost function of the generating …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 3, 2016 · pp. 25–33 Read article
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Impact of Source/Drain Engineering on Performance of Single Gate and Dual Gate Junctionless MOSFET
Abstract: Abstract: This letter is the study on impact of source/drain engineering on Single Gate (SG) and Dual Gate (DG) Junctionless MOSFET. Both the proposed MOSFET have Gate Stacking and highly doped source/drain region, so name suggested is Highly Doped Source Drain Gate Stack Junctionless (HDSD-GSJL) MOSFET. Here we investigate the effect of highly doped source/drain, gate stacking and double gate on junctionless MOSFET. The investigation is performed in relations of …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 1, 2019 · pp. 10–14 Read article
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Performance Analysis of Bootstrapping Techniques to Overcome the Threshold Voltage Drop in NMOS Logic Design
Abstract: Abstract: In this paper, we study the concept of bootstrapping techniques and analyzed its performance in digital CMOS circuits. These bootstrapping circuits are used to increase the gate voltage of transistors so that drain node voltage can be pulled high to overcome the threshold voltage drop problem in NMOS logic design. Also discuss the drawback associated with voltage bootstrapping techniques in NMOS logic design that is sneak path problem between …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 1, 2019 · pp. 15–20 Read article
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Performance Analysis of Fully Flexible Organic Humidity Sensor with Top-Contact and Bottom-Contact OTFTs
Abstract: Abstract: Organic field-effect transistor (OFET) based humidity sensors are extensively used nowadays due to their low cost, mechanically flexible and compatibility with lower temperature fabrication techniques that support the plastic substrate based device and circuit applications. This paper investigates the humidity dependence of performance of organic humidity sensor with Top-Contact and Bottom-Contact OTFTs. Subsequently, impact of channel length on sensor performance is analyzed. The humidity sensitivity of organic sensor drain …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 1, 2019 · pp. 26–34 Read article
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Numerical Simulation and Parameter Analysis for Pentacene based Organic thin Film Transistor with HfO2 Gate Dielectric
Abstract: This paper explains 2D numerical simulation and Characterization of Electrical parameter of Pentacene (Organic semiconductor) based Organic thin film transistor (OTFT) devices with HfO2 as a gate dielectric and Electrical parameters including; Threshold Voltage (Vt), Mobility (µ),Ion/Ioff, and Transconductance (gm), Sub threshold slope (SS) are extracted. The numerical simulation includes model for defect density of state and field dependent mobility model.
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 2, 2019 · pp. 28–34 Read article
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Micro-cantilever Sensors for Efficient Gas Sensing
Abstract: AbstractMicro-cantilever has been progressively used for the development of miniaturized sensors for gas sensing, biochemical analysis, medical applications and quality and process control. Micro-cantilevers are fabricated with rectangular silicon slabs having thickness below 1 µm. For gas sensing applications, Si cantilever surface is modified with appropriate sensing materials for selective adsorption of gas/vapor or biomolecules. The bending of the cantilever due to different surface conditions is measured with laser beam …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 3, 2019 · pp. 16–24 Read article