Trends in Opto-electro & Optical Communication
Volume 3, Issue 1 (2013)
Published
Table of contents
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Comparative Analysis of Power Penalty versus Crosstalk in Optical Active Network Components like Erbium Doped Fiber Amplifier, Raman Amplifier and Semiconductor Optical Amplifier
Abstract: AbstractOptical amplifiers boost the power of optical system without optoelectronics (O-E-O) conversion. The optical amplification process is accompanied by Amplified Spontaneous Emission (ASE) noise that accumulates along the transmission line and degrades the optical signal to noise ratio (OSNR). Intensity modulation in one channel causes crosstalk in the other channel via the change of the complex refractive index in the amplifier. In this paper, authors tried to calculate and compare …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 1, 2013 · pp. 1–10 Read article
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Design and Performance Analysis of a 635 nm Ga0.5In0.5P/(Al0.7Ga0.3)0.5In0.5P Multiple Quantum Well Separate Confinement Heterostructure Red Laser Considering Thermal Limitations
Abstract: AbstractIn this work, the performance characteristics of a GaInP - based 635 nm multiple quantum well (MQW) separate confinement heterostructure (SCH) Red laser has been obtained through computations. The material gain of Ga0.5In0.5P/(Al0.5Ga0.5)0.5In0.5P MQW edge emitting laser (EEL) has been theoretically obtained. The peak material gain obtained from the analysis has been used for analyzing the performance of the designed double-heterostructure laser. A maximum output power of 71.18 mW and …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 1, 2013 · pp. 11–17 Read article
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Effects of Variation of Injection Current and Differential Gain on 450 nm InGaN True Blue Semiconductor Laser
Abstract: AbstractIn this work, the performance analysis of a designed 450 nm InGaN True Blue Semiconductor Laser has been presented by varying injection current and differential gain. The study has been divided into three major segments; the first of which deals with changes in carrier density, photon density and output power with variation of injection current. A maximum output power of 182.6 mW is obtained for 90 mA injection current and …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 1, 2013 · pp. 18–23 Read article
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Improved Performance Characteristics of A Designed 450 nm True Blue Laser Using InGaN/AlGaN Materials
Abstract: AbstractIn this work, the characteristics of a designed 450 nm true blue semiconductor laser are presented. Performance and optimizations of the designed laser are presented using InGaN/AlGaN active layer materials. A maximum optical output power of the laser is obtained as 147.48 mW for 93 mA injection current and 1 × 10−16 cm2 differential gain, where, the threshold current is 9.3 mA. The modal gain is calculated as 69.774 cm−1 …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 1, 2013 · pp. 24–30 Read article