1 publication

• Published Subscription 8 Apr 2019

  Simulation Studies on the Electrical Characteristics of High Electron Mobility Transistors

  By Subhadeep Mukhopadhyay, Sanjib Kalita, Ashish Prajapati, Susanta Sinha Roy, Jyoti Prasad Banerjee, James Andrew McLaughlin

  Abstract: AbstractSimulation studies have been performed on the AlGaN/GaN high electron mobility transistor (HEMT) with AlN spacer layer. The current-voltage characteristics have been studied with respect to different gate voltages and different doping concentrations. Studies have been performed on the quantum well depth variation corresponding to the designed HEMTs.Keywords: Doping, drain current, drain voltage, quantum wellCite this ArticleSanjib Kalita, Ashish Prajapati, Susanta Sinha Roy, Jyoti Prasad Banerjee, James Andrew McLaughlin, Subhadeep …

  Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 32–36 Read article →