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VLSI Transistor and Interconnect Scaling OverviewBy Pritam Bhattacharjee, Arindam Sadhu
Abstract: In this paper, various types of device and interconnect scaling used for VLSI transistors are mentioned. Advanced device scaling techniques using SOI & FINFET technology are discussed for nano-devices. New technologies adopted at research level are stated here in brief. Keywords: Scaling factor ‘s’, technology or process node, short-channel effects, draininduced barrier lowering, punch through, surface scattering, velocity saturation, impact ionization, hot electrons, SOI, floating body, FinFET, quantum dot cellular …
Published in Journal of Electronic Design Technology · Vol. 5, Issue 1, 2014 · pp. 1–15 Read article →