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A Double-Ended Read-Decoupled 8T SRAM Cell with Improved Read Stability and Access Time at 45 nm TechnologyBy Anjali Pachauri, Nikhil Saxena
Abstract: AbstractDue to rampant leveling of instrument measurements, the stability of an SRAM cell is the biggest anxiety for upcoming technology. In this paper, it is introduced by an 8T (8-transistor) SRAM cell. The enlarged data stability is offered by proposed cell until read operation. The voltage scale of the node keeping ‘0’ is enlarged by introduced cell and thus it achieves a near butterfly curve that is vital to creation …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 2, 2017 · pp. 29–33 Read article →