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Design and Analysis of an Efficient Fast Low Power 1 Kb SRAM Cell Using 90nm and 45 nm Microwind TechnologyBy A.K. Pathrikar, Rajkumar S. Deshpande
Abstract: This paper proposes a review on study and analysis of an efficient fast low power 1 Kb SRAM cell using 90 and 45 nm Microwind technology. In this paper we have proposed the tentative improvement in performance parameters of SRAM cell like power dissipation, read or write speed, stability and signal to noise margin ration (SNM) using CMOS scaling.Keywords: SRAM, CMOS scaling, MicrowindCite this ArticlePathrikar A.K, Deshpande Rajkumar S. Design …
Published in Journal of VLSI Design Tools and Technology · Vol. 5, Issue 2, 2015 · pp. 1–3 Read article →