transmittance
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Detailed Study On Physical Properties Of Silicon Nitride Films Deposited By Plasma Enhanced Chemical Vapour Deposition System
Abstract: Amorphous silicon nitride films have been deposited by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) technique using silane (SiH4) and ammonia (NH3) as source gases. Investigations have been made in detail to understand the influence of process parameters such as RF power, substrate temperature, gas flow ratio, working pressure etc, on the optical, electrical and surface properties in order to obtain dielectric Si3N4 films for semiconductor device applications. Amorphous …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 3, Issue 1, 2016 · pp. 1–8 Read article