Suspended gate MOSFET
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Novel MOSFET Based Pressure Sensor That Uses Combined Channel Piezoresistance and Gate Capacitance Effects
Abstract: The paper considers modeling and analysis of a square and circular diaphragm Suspended Gate MOSFET based pressure sensor using COMSOL Multiphysics. Two structures, one a square with an n-channel MOSFET at the center and the second a circle with a p-channel MOSFET at the edge of the diaphragm were simulated. The piezoresistance effect of the channel and capacitance variation due to the suspended gate have been exploited in designing the …
Published in Recent Trends in Sensor Research & Technology · Vol. 2, Issue 2, 2015 · pp. 30–39 Read article