SiNWFET

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• Published Subscription 17 Jul 2015

  A Technological Review on Quantum Ballistic Transport Model Based Silicon Nanowire Field Effect Transistors for Circuit Simulation and Design

  By mayank chakraverty, Kinshuk Gupta, Vinay G Babu, Vaibhav Meshra Meshram

  Abstract: Nanowire MOSFETs are recognized as one of the most promising candidates to extend Moore’s law into nanoelectronics era. This paper reviews the process, application, device physics and compact modeling of Gate All around (GAA) nanowire MOSFETs. The most widely used methods of nanowire synthesis have been discussed. The paper presents the various device optimization techniques and scaling potential of nanowire transistors. A process sensitivity study of silicon nanowire transistors at …

  Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 5, Issue 2, 2015 · pp. 20–31 Read article →