pocket doped window

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• Published Ahead of print Open access Article 20 May 2023

  Improvements in Analog Performance of Dual Metal Gate based Silicon-on-Insulator Junctionless Transistor with Pocket Doped Window

  By Priyansh Tripathi, Narendra Yadava, Mangal Deep Gupta, R.K. Chauhan

  Abstract: This paper elucidates the impact of the pocket doped window on the analog performance of dual metal gate based silicon-on-insulator junctionless transistor (DMG SOIJLT). The analog parameters of the proposed SOIJLT are compared with DMG based conventional SOIJLT. The findings of analog performance comparison reveal that transconductance (gm), transconductance generation factor (TGF), output conductance (gd), output resistance (r0), intrinsic gain (AV), and cut-off frequency (fT) have improved for DMG PD-SOIJLT …

  Published in Journal of Microelectronics and Solid State Devices Read article →