CZ- Silicon
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A Review of Formation of Oxygen-Related Donors (ODs) and Impurity Concentration in Step-Annealed Czochralski Silicon
Abstract: Czochralski (CZ) silicon being one of the two methods of silicon crystallization, the one that is used commercially for device fabrication, needs to be studied more closely. Hence, the Generation and behaviour of thermal donors (TD) and new donors (ND) as a result of pre-annealing at moderate temperature 480°C of carbon-rich boron-doped (p-type) CZ-silicon has been studied here, as function of annealing time by Hall studies and resistivity measurements in …
Published in Research & Reviews : Journal of Physics · Vol. 12, Issue 3, 2023 · pp. 1–6 Read article