BiCMOS

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• Published Ahead of print Open access Article 25 Jan 2023

  High Frequency Design Approach and Feasibility Study of HBT Based W-band (90.0 GHz-100.0 GHz) Amplifier using 130 nm SiGe Based BiCMOS Technology

  By Shib Shankar Singh, M. Madhav Kumar, Divya Kumar Garg

  Abstract: This paper present high frequency design approach and feasibility study of HBT (Hetero Junction Bipolar Transistor) based two-stage cascode amplifiers at W-band (90.0 GHz-100.0 GHz). The proposed amplifier has design using 130 nm SiGe based BiCMOS technology. This paper used low cost technology for designing of w-band amplifier and this is novelty of this paper. The schematic design and feasibility study has been carried out using Cadence software. The selection …

  Published in International Journal of Digital Communication and Analog Signals Read article →