analog electronics
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Novel Effect of Gate Length on the Electrical Characteristics of Nanoelectronic Double-Heterojunction HEMTs with the Circuit Symbols and Load Line to Configure the Common-Source Amplifiers in Analog Electronics
Abstract: Total 3566 individual simulation-outputs are reported in this work. The linear region and saturation region in each drain characteristic curve of nanoelectronic AlGaN/GaN/AlGaN double-heterojunction high electron mobility transistors (HEMTs) are clearly shown. In this work, we have obtained the maximum drain current of 389 mA using these HEMTs. The investigations on the dependence of drain current with respect to gate length in these double-heterojunction HEMTs is a novelty of this …
Published in Research & Reviews: A Journal of Embedded System & Applications · Vol. 5, Issue 2, 2017 · pp. 8–18 Read article