Alloy composition

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• Published Subscription 24 May 2019

  Impact of Barrier Thickness and Height on the Current-Voltage (I-V) Characteristics of GaAs/Ga1-xAlxAs Quantum Cascaded Laser

  By Manish Kumar Yadav, B. P. Pandey, Dharmendra Kumar

  Abstract: Quantum Cascaded Laser (QCL) physics is different from a diode laser. In diode, laser transitions occur between the conduction band and valance band of the materials whereas in quantum-cascade laser transitions occur between states within a single quantum well. This paper presents the effect of barriers thickness on the I-V characteristics of GaAs/Ga1-xAlxAs based QCL. The calculated I-V characteristics findings predict the output current modulation capability of the proposed GaAs/Ga1-xAlxAs …

  Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 21, Issue 1, 2019 · pp. 6–12 Read article →