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1 article for “dynamic and magnetic random access memory”
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Ferromagnetic Resonance in II-VI Diluted Magnetic Semiconductor, ZnxTM1-xO Nanostructures
Abstract: The ferromagnetic resonance in II-VI diluted magnetic semiconductor Zn1 xMnxO was studied theoretically. The model employed to manipulate the Hamiltonian of the system which is the Heisenberg Model. By considering a cloud of electron gas and employing equation of state, the fractions of demagnetization factors was determined. For FMR probes, the sample magnetization results from the magnetic moments of dipolar-coupled but unpaired electrons. The resulting frequency versus magnetization curve is …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 24, Issue 1, 2022 · pp. 1–16 Read article