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1 article for “Hafnium oxide”
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Ferroelectric Materials for Next-Generation Non-Volatile Memory Applications
Abstract: The continuous scaling of conventional memory technologies is increasingly constrained by limitations in power consumption, speed, endurance, and integration density. As data-intensive applications such as artificial intelligence, Internet of Things, and edge computing demand fast and energy-efficient memory solutions, alternative non-volatile memory technologies have gained significant attention. Ferroelectric materials, characterized by their reversible spontaneous polarization, offer a promising pathway toward next-generation non-volatile memory due to their intrinsic non-volatility, low operating …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 1–9 Read article