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1 article for “DBIL”
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Analysis of DIBL Effect in MOSFET Working
Abstract: AbstractOne of the most widely used electronic devices, particularly in digital integrated circuits, is the metal insulator semiconductor (MIS) transistor. Most of the existing transistors used in fabrication of integrated chips are with junctions. The device scaling is growing the channel length between junctions in devices are scaling gone down to 10 nm. Drain Induced Barrier Lowering (DIBL) effect is prominent as the feature size of MOS device keep diminishing. …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 3, 2018 · pp. 33–40 Read article