The scaling down of devices has been the driving force towards technological advancements. Further scaling down has faced serious limits related to fabrication technology and device performances. CNTFET is a promising alternative for CMOS devices with which, further scaling down can be achieved. Furthermore, CNTFET offers many advantages over CMOS technology. Similar to Bi-CMOS technology, which combines the advantages of bipolar and CMOS technologies, Bi-CNTFET technology would be an even more promising one due to the inherent advantages of CNTFET over MOSFET. The thesis work aims to design, simulate and analyze Bi-CMOS and Bi-CNTFET technologies and thereby provide a complete comparison between the two technologies. Universal gates, combinational logic and sequential logic based designs are used to compare Bi-CMOS and Bi-CNTFET technologies and prove the better performance of Bi-CNTFET over Bi-CMOS technology. The comparison between the two technologies was done based on power and delay metrics obtained from the transient response. Keywords: CNTFET, Bi-CNTFET, Bi-CMOS, scalingCite this Article Vaishak Prathap, Ramkumar S. A Study of Bi-CNTFET Technology as an Alternative to Bi-CMOS Technology. NanoTrends: A Journal of Nanotechnology and its Applications. 2016; 18(2): 1–6p.
