Trends in Opto-electro & Optical Communication
Volume 4, Issue 3 (2014)
Published
Table of contents
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25 Gbps Downstream, 3 Gbps Upstream, 20 Km Reach PON Using Duobinary Modulation Based on Reflective-ONU Utilizing R-SOA for Remodulation
Abstract: AbstractThe paper demonstrates 3 Gbps upstream transmission, 25 Gbps of downstream transmission of a single channel PON over 20 Km utilizing the wavelength reuse scheme using R-SOA in the ONU. NRZ and duobinary modulation scheme is considered and compared and the duobinary modulation scheme is selected for its better performance.Keywords: Reflective semiconductor optical amplifier, Passive Optical Network (PON), duobinary modulation, fiber to the x (FTTx)
Published in Trends in Opto-electro & Optical Communication · Vol. 4, Issue 3, 2014 · pp. 1–7 Read article
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Efficient and High Power InGaN Based MQW Blue Laser
Abstract: AbstractThis research work deals with the design of a 450 nm MQW blue laser to get the optimized output power and efficiency. The maximum output power is found for an injection current of 120 mA. This laser is designed to improve the performance of a MQW blue laser to get an efficient and high power output. For this purpose the structure is designed using In0.235Ga0.765N/Al0.07Ga0.93. A high performance of the …
Published in Trends in Opto-electro & Optical Communication · Vol. 4, Issue 3, 2014 · pp. 14–22 Read article
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Performance Optimizing of a Simulated Model of a Fabry-Perot based Tunable Laser Operating at 1550 nm
Abstract: AbstractThe paper presents data for an optimized Fabry-Perot tunable laser, with a wavelength tuning range of 56.3 nm, with a high output power of 17.4307 dBm. Incentive for this research has been due to the cause that Fabry–Perot semiconductor laser diodes have been fine contenders as transmitters to be used in WDM optical networks. The proposed system is capable of modulating a maximum bit rate of 26.58 Gb/s, with an …
Published in Trends in Opto-electro & Optical Communication · Vol. 4, Issue 3, 2014 · pp. 23–31 Read article
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Optimized High Performance Characteristics of a Designed 1553 nm Wideband Travelling Wave Semiconductor Optical Amplifier
Abstract: AbstractIn this work, the performance characteristics of a designed 1553 nm Wideband Travelling Wave Semiconductor Optical Amplifier are presented. A high performance of the designed wideband SOA is obtained and analyzed with the optimized values of injection current, optical confinement factor, input power and active length. A maximum gain of 30.16 dB and minimum noise figure of 4.48 dB is obtained for 200 mA injection current, 0.33 optical confinement factor …
Published in Trends in Opto-electro & Optical Communication · Vol. 4, Issue 3, 2014 · pp. 32–39 Read article
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Effects of Variation of Active Region Radius on the Performance Characteristics of a Designed 1550 nm Al0.09Ga0.38In0.53As/InP MQW VCSEL
Abstract: AbstractIn this work, the performance characteristics of a designed Al0.09Ga0.38In0.53As/InP based 1550 nm top emitting multi quantum well (MQW) vertical cavity surface emitting laser (VCSEL) has been obtained. By evaluating the attained result of different parameters of selected MQW VCSEL the peak material gain is obtained as 1652.3 cm-1. For 6.1 mA of injection current and 5.65 µm of active region radius, the optical output power of 31.37 dBm and …
Published in Trends in Opto-electro & Optical Communication · Vol. 4, Issue 3, 2014 · pp. 8–13 Read article