Journal of VLSI Design Tools and Technology
Volume 7, Issue 3 (2017)
Published
Table of contents
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Implementation of RSA and CRT-RSA with MIST to Resist Power Analysis Attacks
Abstract: Security has transformed out into a fundamental range of research in space of computer science. With the advancement of side channel attacks, all the private and public key cryptosystems accessible worldwide has been discovered defenceless. Accordingly there has broughtdireness up in planning resisting systems against such unpredictable attacks. Power analysis attacks, which is the most famous side channel attacks has turned out to be a test for the majority of …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 1–12 Read article
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Effect of Various Parameters on Threshold Voltage of Virtually Fabricated Lightly Doped PMOS Device
Abstract: This paper emphasis on the design, fabrication and analysis of 45 nm P type MOSFET device using SILVACO TCAD tool. The analysis was based on variation of various parameters like oxide thickness, threshold implant and halo implant (pockets) to analyze the threshold voltage. The drain versus gate and drain versus gate plots are being plotted using tony-plot. It has been observed that as the thickness of the oxide increases, threshold …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 13–20 Read article
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Low-Offset High Speed CMOS Voltage Comparator using 180 nm Technology
Abstract: A low Off-Set high-speed two-stage dynamic comparator is presented. In this circuit, PMOS transistors are used at the input of the first and second stages of the comparator. At the evaluation phase, the second stage is activated after the first stage with a predetermined delay to achieve a controllable pre-amplifier gain. Also, the first stage is turned off after the delay to reduce overall power consumption. Simulation results in 0.18µm …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 21–27 Read article
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Performance Analysis of 3T DRAM Using FinFET Based with Leakage Reduction Techniques at 45 nm Technology
Abstract: The proposed area of research is to reduce the power consumption, leakage voltage, leakage current and leakage power of DRAM while maintaining the competitive performance. The Fin FET approach is used in DRAM for high performance. Fin type field effect transistors (Fin FET) are capable substitutes for bulk CMOS at the nano-scale. Fin FET are double gate device. A Fin FET uses an intrinsic body. It greatly suppresses the device-performance …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 28–34 Read article
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Low Power High Speed Eight-Transistor (8T) SRAM Cell with Enhanced Data Stability
Abstract: The demand of static random access memory cell in embedded memories is rapidly increasing. To design SRAM is continuously becoming difficult due to limitation of weaker write margin, degraded data stability and higher leakage power consumption. In order to overcome these limitations, new 8T SRAM has been explored. The simulation results depicts better data stability, low access delay and decreased leakage power consumption. Alternatively, proposed cell with sleep transistor and …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 35–44 Read article
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High Speed and Low Area Energy Efficient FPGA Implementation using RSD based Elliptic Curve Cryptography
Abstract: In this paper we will study high speed energy efficient FPGA implementation using redundant sign digit elliptic curve cryptography. In existing system to design processor with high area and low speed computation process so that we proposed to low area with high speed computation using Elliptical cryptography processor. Here we use redundant signed digit to reduce the overhead due to computations. For modular arithmetic operation for multiplication, we used Karatsuba-Ofman …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 45–50 Read article
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Carbon Nanotube Transistor Based Novel Ring Oscillator with Minimum Power Consumption at 32 nm Technology Node
Abstract: In this article an analysis of carbon nanotube field effect transistor based ring oscillator is performed. After analysis it was found that carbon nanotube transistor consumes less power in comparison to silicon transistor. CNFET is one possible candidate to substitute silicon-based integrated circuit (IC) technology, as the performance increase of conventional transistors witnessed during the last decades will arrive at its ultimate limits in the near future. Its present progress …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 51–54 Read article
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Single Bit Low-Power High-Speed Full Adder
Abstract: This paper presents a high-speed low-power full adder cells that lead to have a reduced power-delay product (PDP). A comparison against other full-adder structure as having low PDP, in terms of speed, power consumption and area of cells is carried out. This paper contains, a hybrid 1-bit full adder design employing both complementary metal-oxide semiconductor (CMOS) and transmission gate logic styles. First implemented was the design for 1 bit then …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 55–60 Read article