Journal of Microelectronics and Solid State Devices
Volume 1, Issue 1 (2015)
Published
Table of contents
-
Computation of Indium concentration in Indium Gallium Arsenide semiconductor at Terahertz frequency
Abstract: Concentration of indium in indium gallium arsenide (InxGa1-xAs) is computed at optical signal having wavelength 589 nm . Reflection as well as absorption losses are considered to obtain the transmitted intensity. Analytical result showed that reflectance increases with increasing of indium concentration, where absorbance decreases with the same concentration. An experimental set up is designed to find out the transmitted intensity, which leads to the computation of concentration of indium …
Published in Journal of Microelectronics and Solid State Devices · Vol. 1, Issue 1, 2015 Read article
-
Analysis of Operational Transconductance Amplifier using 180 nm Technology CMOS Process
Abstract: Today, it is laborious to design an amplifier with low power utilization, high gain and high bandwidth. ICs industries are growing very fast and it is challenging for day by day growth to provide a better design with all accuracy. It is advisable to design an amplifier with an ideal way. Amplifiers are most essential unit of the analog circuitry; differential amplifier performs very well as input amplifier. Transfer characteristic …
Published in Journal of Microelectronics and Solid State Devices · Vol. 1, Issue 1, 2015 · pp. 10–13 Read article
-
Structural, Magnetic and Dielectric Properties of Barium Cobalt Hexaferrite-powder and Barium Cobalt Hexaferrite- Epoxy Resin Composite Film
Abstract: The W-type barium cobalt hexaferrite powder with chemical composition BaCo2Fe16O27 was prepared using a simple heat treatment method. The precursor was calcinated at 650 °C for 3 h in a muffle furnace and then slowly cooled to room temperature in order to obtain barium cobalt hexaferrite powder. The flexible epoxy thin film of Ba-cobalt hexaferrite/epoxy composite was fabricated using the suitable amount of hardener and curing agent. Surface and morphological …
Published in Journal of Microelectronics and Solid State Devices · Vol. 1, Issue 1, 2015 · pp. 14–20 Read article
-
Efficient Design of Pseudo-Random Pattern Generator with High Fault Coverage
Abstract: In this paper a comparative analysis of various test pattern generators is done in terms of power consumed .Testing is a crucial process in VLSI (Very-large-scale integration), not only it ensures proper functioning of the chip ,it also helps identify the common faults that occur as a part of VLSI fabrication. However, the power consumed during the testing process is nearly 40% higher than normal circuit operation. Various test pattern …
Published in Journal of Microelectronics and Solid State Devices · Vol. 1, Issue 1, 2015 · pp. 21–25 Read article
-
STUDY of MEMRISTOR MODELS and ITS APPLICATIONS in LOGIC CIRCUITS
Abstract: One significant area of nanotechnology is nanoelectronics. And a recent development in nanoelectronics is the discovery of the memristor, a fundamental circuit element. A memristor is essentially a nonvolatile nanoscale programmable resistor whose resistance, or memristance to be precise, is changed by applying a voltage across or current through, the device. Memristor has the potential to replace transistors in the digital circuit of upcoming days. Research is in full swing …
Published in Journal of Microelectronics and Solid State Devices · Vol. 1, Issue 1, 2015 · pp. 26–31 Read article