The advent of 5G technology has indeed revolutionized modern life, bringing about unprecedented ease and giving rise to a myriad of emerging applications such as Artificial Intelligence (AI), Augmented and Virtual Reality (AR/VR), and Industry 4.0. This transformative technology has particularly catalyzed advancements in the medical and communication fields, prompting the need for innovative nanoscale devices to enhance system performance. The higher-frequency applications facilitated by 5G, such as Massive Machine Type Communication (mMTC) and Ultra-Reliable Low Latency Communication (URLLC), have further propelled the demand for cutting-edge technologies in these domains. One of the distinctive features of 5G technology is its foray into higher frequencies, including the millimeter-wave spectrum. This strategic move has not only elevated the capabilities of communication networks but has also unlocked a vast array of possibilities in diverse fields, ranging from imaging and sensing to radar applications. This study delves into the exploration of different device design approaches, including thin body, graded channel, halo-doped, and multiple-gate configurations. The investigation focuses on critical parameters such as threshold voltage (VTH) and RF performance matrices like Av, fT, and fMAX within the low to moderate inversion region. This targeted approach is aligned with the overarching goal of optimizing devices for low power and high- frequency applications, a prerequisite for the efficient functioning of 5G-enabled systems. The outcomes of the study emphasize that sub-100 nm Fully-Depleted Silicon-On-Insulator (FD-SOI) Metal-Oxide- Semiconductor Field-Effect Transistors (MOSFETs) emerge as robust contenders for analog/RF applications in the lucrative and dynamic 5G wireless communications market. As we navigate the complexities of the modern wireless communications landscape, the insights provided by this research underscore the pivotal role of advanced device design in shaping the trajectory of 5G technology. The potential of sub-100 nm FD-SOI MOSFETs is highlighted as a key enabler, poised to drive the next wave of innovations in analog/RF applications. This study contributes to the ongoing discourse on the intersection of 5G technology and advanced semiconductor device design, providing valuable insights that resonate with the evolving needs of the wireless communications ecosystem.
