Effect Analysis of Different ETL Layer Thickness in Perovskite (CH3NH3PbI3) Solar Cell Using CuSCN as Hole Transport Layer

Ajay Kumar; Ravi Shankar Yadav

Abstract

Thickness of Electron Transport Layer (ETL) shows an important role in terms of stability and efficiency of perovskite solar cells. In this paper, numerical simulation and detailed modeling on perovskite solar cell was carried out using perovskite material such as methyl ammonium lead iodide (MAPbI3, MA= CH3NH3) at various thickness’s of ETL layer using the SCAPS tool. The electrical properties of the “MAPbI3 material” used as active layer for different parameters like fill factor (FF), open-circuit voltage (Voc), power conversion efficiency (PCE), and short-circuit current density (Jsc) correspondingly. In the construction of the perovskite solar cell, copper thiocyanate (CuSCN) material serves as “hole transport layer (HTL)”. The simulation result shows that at 0.010 ETL layer thickness (Voc = 1.1796, Jsc = 28.1664, FF = 85.42 and PCE = 28.38), at 0.020 ETL layer thickness (Voc = 1.1799, Jsc = 28.0457, FF = 84.72 and PCE = 28.04) and at 0.030 ETL layer thickness (Voc = 1.180, Jsc = 27.90, FF = 84.63 and PCE = 27.87) respectively. The “capacitance–frequency (C-F) and capacitance–voltage (C-V)” for above studied perovskite solar cell have been calculated at various thicknesses of ETL layers.

Abstract

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