Journal of Microelectronics and Solid State Devices

Growth Mechanism Dependent Room Temperature Electrical Properties of Complex Spinel Oxide Nanostructures

  1. Shalu Sharma
  2. Sandeep Chhoker

Abstract

Here we present the investigation on growth mechanism and corresponding electrical properties of complex spinel zinc stannate (Zn2SnO4) nanostructures synthesized using VLS (vapour-liquid-solid) method in a vacuum operated thermal CVD setup. GAXRD, Raman and Room temperature resistivity, mobility and carrier concentration of variety of nanostructures of Zn2SnO4 have been analysed to understand the effect plausible growth mechanism dependent properties. The corresponding role of catalyst layer thickness during growth as well as the corresponding dimensionality of the nanostructures has been found to influence the RT electrical properties appreciably. These results indicate a promising way to tune complex ternary oxides nanostructures for sensing, TCOs, etc.
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