Effect of Bismuth doping on Thiourea crystals : A NLO Material

Abstract

Single crystals of pure and thiourea-substituted bismuth were successfully grown using the slow evaporation solution growth technique at ambient temperature. The impact of thiourea doping on the crystal properties was thoroughly investigated. Solubility tests for the grown samples were conducted at various temperatures, providing crucial data on the dissolution characteristics. Structural characterization of these crystals was performed using single crystal X-ray diffraction (XRD), confirming their crystalline nature. Energy-dispersive X-ray spectroscopy (EDS) verified the presence of bismuth in the doped bismuth thiourea crystals. The surface morphology of the crystals was examined using scanning electron microscopy (SEM), revealing detailed surface structures. Functional groups within the crystals were identified through Fourier-transform infrared (FTIR) spectroscopy, ensuring the successful incorporation of thiourea. Additionally, the non-linear optical efficiency of the doped crystals was evaluated using a modified Kurtz and Perry experimental setup, indicating an improvement due to doping. This comprehensive study highlights the potential enhancements in crystal properties and non-linear optical performance due to thiourea substitution in bismuth crystals, contributing valuable insights for future applications in optical materials and technologies.