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Review Paper To Design a Low Power CNTFET Based XOR GateBy Veski Dabas, Surender Kumar Grewal
Abstract: The continuous scaling down of Silicon technology leads to various critical challenges and reliability issues such as short channel effect, high leakage current, interconnect problems, etc. CNTFET is the most probable substitutes to traditional MOSFET. The CNTFET device based circuits portray advantages with its better control over the device channel, reduced leakage current, reduced short channel effects. The CNTFET based XOR gate circuits incur the minimum power and energy dissipation. …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 1, 2018 · pp. 48–53 Read article →