1 publication

• Published Subscription 8 Apr 2019

  InGaN Based p-i-n Solar Cell

  By Syed Salauddin Jeon, Sayeda Anika Amin, Md. Tanvir Hasan

  Abstract: AbstractA major hurdle in achieving ultrahigh efficiency solar cells is the availability of materials and corresponding device structures. The ternary alloy InGaN has the potential to achieve high efficiency due to its several advantages. However, the efficiency of a p-n InGaN solar cell is still quite low compared to other III–V technologies. In this work, with a view to attain better efficiency, inclusion of an intrinsic layer (i-layer) in the …

  Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 3, 2016 · pp. 1–5 Read article →