2 publications

• Published Subscription 17 Apr 2018

  Review Paper To Design a Low Power CNTFET Based XOR Gate

  By Veski Dabas, Surender Kumar Grewal

  Abstract: The continuous scaling down of Silicon technology leads to various critical challenges and reliability issues such as short channel effect, high leakage current, interconnect problems, etc. CNTFET is the most probable substitutes to traditional MOSFET. The CNTFET device based circuits portray advantages with its better control over the device channel, reduced leakage current, reduced short channel effects. The CNTFET based XOR gate circuits incur the minimum power and energy dissipation. …

  Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 1, 2018 · pp. 48–53 Read article →

• Published Subscription 17 Apr 2018

  Review Paper: Low Power SRAM Cell using FinFET Technology

  By Mamta ., Surender Kumar Grewal

  Abstract: To make portable battery operated devices more efficient with low leakage current has become a major challenge with the technology scaling. As the technology is scaling, the bulk MOSFET faces various challenges which lead to increased leakage current. FinFET is the most encouraging substitute to bulk CMOS, because of the reduced short channel effect. The FinFET device based circuits portrays advantages with its better control over the device channel and …

  Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 1, 2018 · pp. 43–47 Read article →