2 publications

• Published Subscription 9 Aug 2019

  Layout Design, Fabrication and Characterization of n-Channel MOSFET

  By savita maurya, savita Shrivastava

  Abstract: Primary force behind evolution of semiconductor industry is MOSFET, after its first IC based experimental demonstration in 1960s. It is fundamental working unit of most of the electronic circuits like cells in living being. Number of devices on a single chip has been increased with rapid phase with evolution of new technology of materials. Today there are more than 4 billion transistors are there on a single chip with effective …

  Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 2, 2016 · pp. 13–18 Read article →

• Published Subscription 9 Aug 2019

  Challenges Beyond 100 nm MOS Devices

  By savita maurya, sarita Shrivastava

  Abstract: MOS devices have been aggressively scaled down in research and in the production in last few years. Sub-100 nm feature size MOS circuits have been used for many. However, many serious limitations and problems emerged with such a small geometry MOSFETs are used to realize very large-scale integrated circuits. Commercial 45 nm technology node, has much higher production cost and it is one of the greatest concern for scaling down …

  Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 2, 2016 · pp. 1–4 Read article →