4 publications
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Variations of Source Current in the Double-Heterojunction HEMTsBy Subhadeep Mukhopadhyay, Sanjib Kalita
Abstract: AbstractIn this report, we have studied the variations in source current with respect to drain voltage corresponding to the double heterojunction (DH) high electron mobility transistors (HEMTs). Also, the effects of gate voltage and aluminium mole fractions on source current are studied. In this work, the highest source current achieved is 3.3 mA. This work may be useful to design many nanoelectronic HEMTs.Keywords: Source current, drain voltage, gate voltage, mole …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 3, 2016 · pp. 19–24 Read article →
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Simulation Studies on the Electrical Characteristics of Novel Nanoelectronic AlGaN/GaN/AlGaN Double-Heterojunction HEMTs for Industrial ApplicationsBy Subhadeep Mukhopadhyay, Sanjib Kalita
Abstract: AbstractWe report the drain characteristics of AlGaN/GaN/AlGaN double heterojunction (DH) high electron mobility transistors (HEMTs) with the associated quantum well depths. The drain current is higher corresponding to the larger doping concentration of AlGaN nano-layer. The drain current is higher with the larger gate voltage at any particular drain voltage. The quantum well depth is significantly higher with the increasing doping concentration of AlGaN nano-layer. About the novelty of this …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 3, 2016 · pp. 6–18 Read article →
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Simulation Studies on the Electrical Characteristics of High Electron Mobility TransistorsBy Subhadeep Mukhopadhyay, Sanjib Kalita, Ashish Prajapati, Susanta Sinha Roy, Jyoti Prasad Banerjee, James Andrew McLaughlin
Abstract: AbstractSimulation studies have been performed on the AlGaN/GaN high electron mobility transistor (HEMT) with AlN spacer layer. The current-voltage characteristics have been studied with respect to different gate voltages and different doping concentrations. Studies have been performed on the quantum well depth variation corresponding to the designed HEMTs.Keywords: Doping, drain current, drain voltage, quantum wellCite this ArticleSanjib Kalita, Ashish Prajapati, Susanta Sinha Roy, Jyoti Prasad Banerjee, James Andrew McLaughlin, Subhadeep …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 32–36 Read article →
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Simulation Studies on the Drain Characteristics of Microelectronic AlGaN/GaN HEMTs Corresponding to the 30 nm of AlGaN Nano-LayerBy Subhadeep Mukhopadhyay, Sanjib Kalita
Abstract: AbstractIn this work, the simulation studies are performed on high electron mobility transistor (HEMT) structures using the SILVACO-ATLAS software tool. The drain characteristics of HEMT structures is investigated with respect to the Aluminium mole fraction, drain voltage, gate voltage, and gate length at 30 nm thickness of AlGaN nano-layer. The simulation studies on the effect of gate length to control the drain characteristics are a novelty of this work. The …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 1, 2017 · pp. 8–16 Read article →