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Investigation and Dependency Analysis of Silicon Film Thickness on Performance of Surrounding Gate MOSFET at Subthreshold RegimeBy Tarun Kumar Sachdeva, S. K. Agarwal, Alok K. Kushwaha
Abstract: The characteristics of cylindrical gate all around MOSFET have been studied in terms of the dependence of various device performance metrics on silicon film thickness (Tsi). In this work, the effect of silicon film thickness on numerous performance metrics like threshold voltage (Vt), On current (Ion), subthreshold leakage current (Ioff), On-Off current ratio (Ion/Ioff) and DIBL of cylindrical GAA are comprehensively evaluated and analysed. It has been observed that cylindrical …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 2, 2018 · pp. 49–54 Read article →