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Analysis of Saturation Power based on Device Structural Parameters of a 1550 nm Symmetrical MQW Semiconductor Optical AmplifierBy Nigar Sultana, Rinku Basak
Abstract: AbstractThis paper presents the effect of device structure parameters on the saturation power of a 1550 nm symmetrical Multi Quantum Well (MQW) Semiconductor Optical Amplifier (SOA) for a small signal amplifier gain of 30 dB. Expressions are given to assess this dependency and the results indicate that saturation power decreases with the increase of the number of wells, well thickness and length but increases with the increase of barrier thickness. …
Published in Trends in Opto-electro & Optical Communication · Vol. 5, Issue 1, 2015 · pp. 13–18 Read article →